Real-Time Switching Dynamics in STT-MRAM

Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects

Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable interest for developments of STT switched magnetic random access memory (STT-MRAM). Remarkable progress in STT switching with MgO MTJs and increasing interest in STTMRAM in semiconductor industry have been witnessed in recent years. This paper will present a review o...

Failure and reliability analysis of STT-MRAM

Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications. However STT-MRAM suffers from important failure and reliability issues compared with the conventional solutions based on magnetic field swi...

Stateful STT-MRAM- Based Logic for Beyond–Von Neumann Computing

Cascaded Channel Model and Analysis for STT-MRAM

Spin-torque transfer magnetic random access memory (STTMRAM) is a promising emerging non-volatile memory (NVM) technology which shows high potential for replacing the dynamic random access memory (DRAM), as well as for various embedded applications. However, STT-MRAM suffers from process variation induced variations of the access transistor size, the magnetic tunneling junction (MTJ) geometry a...

Panasonic Real-time Meeting Room Stt

In this paper, we describe a real-time speech-to-text (STT) system for Meeting Room (MR) recognition developed at Panasonic. The system is an evolution of Panasonic’s Broadcast News (BN) STT system that was evaluated at the NIST Rich Transcription (RT) 03S event. Newest features of interest include syllable models and merged Multiple Heteroscedastic Linear Discriminant Analysis (MHLDA) feature ...